Ultra-Stable Refractory High-Power Thin Film Resistors for Space Applications

Issue
 Date
Publication Date
Patent No.
8,284,012
Category
Method or Process

A method of fabricating a thin film resistor including providing a substrate, using a low-temperature pulsed-laser deposition process to deposit a titanium carbide (TiC) layer on the substrate, removing portions of the TiC layer with an etching process to leave a TiC pattern on the substrate, and depositing conductive material on opposite ends of the TiC pattern to provide a thin film resistor.

Keywords: thin film, resistor
International Class: H01C7/10