Micro/Nano Scale Devices Created Using Ion Implant Species

Issue
 Date
Publication Date
Patent No.
7,419,917
Category
Method or Process

A method is used for producing nanoscale and microscale devices in a variety of materials, such as silicon dioxide patterned buried films. The method is inexpensive and reliable for making small scale mechanical, optical, or electrical devices and relies upon the implantation of ions into a substrate and subsequent annealing to form a stoichiometric film with the device geometry is defined by the implant energy and dose and so is not limited by the usual process parameters.

Keywords: MEMs, patterned implant, ion
International Class: H01L21/31