Laser Direct Write Release of Nano-Scale and MEMs Devices

Issue
 Date
Publication Date
Patent No.
7,419,915
Category
Method or Process

A method using an etchant and a laser for localized precise heating enables precise etching and release of MEMS devices with improved process control while expanding the number of materials used to make MEMS, including silicon-dioxide patterned films buried in and subsequently released from bulk silicon, as a direct write method of release of patterned structures that enables removal of only that material needed to allow the device to perform to be precisely released, after which, the bulk material can be further processed for additional electrical or packaging functions.

Keywords: laser etching, chemical etching, MEMs
International Class: H01L21/302